CVD

Chemical vapour deposition forms a thin film on a substrate by using the reaction of vapor phase chemicals containing the required constituents of the layer (1). CVD offers a much faster growth rate than many other techniques, e.g molecular beam epitaxy.

Growth of Silicon by CVD

The simplest available reactant for growing silicon films via CVD is silane ($SiH_4$). Silane undergoes the following reactions:

$SiH_4+2* \rightarrow SiH_3*+H*$

$SiH_3* \rightarrow Si*+3H^+$

References

[1] Handbook of semiconductor manufacturing technology, Second Edition edited by Robert Doering and Yoshio Nishi. p 13-1

[2] Maiti et al, 2001