PhD Theses
Past PhD Theses
2014 | John HALPIN | Silicon germanium materials for terahertz emission |
2014 | Charlermwat ('Win') WONGWANITWATTANA | Low thermal conductance platforms for mK tunnelling coolers |
2014 | James RICHARDSON-BULLOCK |
Low temperature semiconductor-superconductor junctions and their optimisation |
2014 | Catarina CASTELEIRO |
Electrical and physical characterization of Ge devices |
2014 | Amna HASSAN |
Transport properties for pure strained Ge quantum well |
2012 | Van Huy NGUYEN | Epitaxial growth of relaxed Ge buffers on (111) and (110) Si substrates using RP-CVD |
2012 | Haitham ALABDULALI (MSc) |
Strain-relaxed, high Ge content, SiGe layers grown on a Si (100) substrate by RP-CVD |
2010 | Stephen THOMAS | Electrical characterization of novel silicon MOSFETs and finFETs |
2010 | John HALPIN (MSc) | High quality relaxed germanium layers on silicon |
2009 | Vishal SHAH | Reverse-graded high germanium content (x>0.75) Si1-xGex virtual substrates |
2007 | Jon PARSONS | Relaxation of strained silicon on virtual substrates |
2007 | Chris BEER | Fabrication and characterisation of novel Ge MOSFETs |
2007 | Dominic PEARMAN | Electrical characterisation and modelling of Schottky barrier metal source/drain MOSFETs |
2007 | Andrew DOBBIE | Investigation of the electrical properties of Si1-xGex channel pMOSFETs with high-k dielectrics |
2006 | Stephen THOMAS (MSc) |
Low frequency noise properties of Si0.64Ge0.36 and tensile strained silicon MOSFETs |
2006 | Andrew McGINN (MSc) |
Electrical characterisation of strained silicon devices |
2005 | Lee NASH |
Growth and characterisation of terrace graded virtual substrates with Si1-xGex (0.15≤x≤1) |
2004 | Sergiy DUROV | High Ge content p-channel SiGe MOSFETs on virtual substrates |
2004 | Gareth NICHOLAS | Investigation of the electronic properties of tensile strained silicon MOSFETs |
2003 | Richard MORRIS | Optimisation studies on strain-engineered germanium heterostructures |
2002 | Adam CAPEWELL | Novel grading of silicon germanium for high quality virtual substrates |
2002 | Dominic FULGONI | Investigation of pseudomorphic SiGe p-channels in Si MOSFETs for dynamic threshold operation |
2001 | Daniel CHRASTINA | Transport in silicon-germanium hetreostructures |
2001 | Maksym MYRONOV | Magnetotransport, structural and optical characterisation of p-type modulation doped heterostructures with high Ge content Si1-xGex channel grown by SS_MBE on Si1-yGey/Si(001) virtual substrates |
2001 | Martin PALMER | Investigation of high mobility pseudomorphic SiGe p-channels in Si MOSFETS at low and high electric fields |
2001 | Martin PREST | Low frequency noise and electrical transport properties of pseudomorphic Si/Si1-xGex heterostructures |
2000 | Sedat AGAN | Thermoelectric properties of silicon based two-dimensional structures |
2000 | Timothy GRASBY | Growth techniques and characterisation of Si1-xGex heterostructures for pMOS applications |
2000 | Somchai KIATGAMOLCHAI | Maximum-entropy mobility spectrum of two-dimensional hole gas in strained-Si1-xGex/Si heterostructures |
2000 | Andrew LAMBERT | Issues concerning the use of H and Sb surfactants in Si and SiGe MBE |
1999 | Ghassem ANSARIPOUR | Hot carriers and high field effects in SiGe heterostructures |
1999 | Glyn BRAITHWAITE | Characterisation of the hole-acoustic phonon interaction in modulation doped Si/Si1-xGex (0.085<x<0.28) heterostructures |
1999 | Christopher BROWN (MSc) | Low frequency noise in buried Si0.5Ge0.5 channel pMOSFETs |
1999 | Ian GERLEMAN | Thermoelectric properties of two-dimensional silicon based heterostructures |
1998 | Richard HAMMOND | The structural and electrical characterisation of SiGe heterostructures deposited on strain relaxed virtual substrates |
1998 | Mhm'd Ali SADEGHZADEH | Electrical properties of Si/Si1-xGex/Si inverted modulation doped structures |
1997 | Robert LANDER | Electronic and material properties of MOS-Gated Si/Si1-xGex p-channel heterostructures |
1997 | Barry McGREGOR | Structural and electrical characterisation of Si:B/Si1-xGex/Si(001) |
1995 | Andrew PLEWS | Electrical properties of two-dimensional hole gases in Si/SiGe heterostructures |
1993 | Engin BASARAN | Growth and electrical characterisation of high resolution Si/SiGe MBE structures |
1993 | James BRIGHTEN | The electrical characterisation of Si1-xGex/Si structures grown by molecular beam epitaxy |
1993 | John EMELEUS | Electrical transport properties of 2-dimensional hole gases in the Si/Si1-xGex system |
1993 | Dave SMITH | Material quality issues in Si and SiGe molecular beam epitaxy |
1992 | Robin BISWAS | Electrical properties of high resolution doping structures |
1992 | Adrian POWELL | Structural characterisation of MBE grown Si and SiGe material |
1991 | Richard HOUGHTON | The growth and evaluation of epilayers grown by silicon molecular beam epitaxy |
1991 | Nevil MATTEY | On the electrical and structural properties of boron delta layers in silicon |
1991 | Carl PARRY | Incorporation of elemental boron during silicon and silicon germanium molecular beam epitaxy |
1991 | Peter PHILLIPS | Conduction processes in spinel ferrites |
1991 | Gooind PINDORIA | Silicon molecular beam epitaxy: doping and material aspects |