Dissemination and project results

Journal articles

1. M. Myronov, A. Bogan and S. Studenikin “Hole mobility in compressively strained germanium on silicon exceeds 7 × 10⁶ cm²V⁻¹s⁻¹”Materials Today 90 Pages 314-321 (2025)Link opens in a new window.

2. Y. Wang, B. Jazizadeh, Z. Yu, A. Aljaghwani, P. Waldron, S. Studenikin, and M. Myronov "Impact of quantum well thickness on hole mobility in strained germanium heterostructures" Applied Physics Letters Vol. 126 Issue 9 092105 (2025).Link opens in a new window
3. S. Bugu, S. Biradar, A. Blake, C. W. Liu, M. Myronov, R. Duffy, G. Fagas, and N. Petkov. “High-Fidelity TiN Processing Modes for Multigate Ge-Based Quantum Devices” Acs Applied Electronic Materials Vol. 7 Issue 2 Pages 652-659 (2025)Link opens in a new window.

 

Conferences

1. M. Hanif, S.Ali, N.Petkov, G.Fagas, R.Murphy, S.Bugu, M.Myronov, S.Ayinde, C.G.Smith, S.Bose, R. Duffy. “Gated Hall-bar devices to evaluate the electronic properties of Ge quantum well heterostructures “E-MRS Fall" September 2025, Warsaw, Poland.