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Dr Arne Renz

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Dr Arne Benjamin Renz

Research in Wide Bandgap Power Semiconductor Interfaces

MSc, PhD, FHEA, MIEEE, MIET

arne dot renz at warwick dot ac dot uk

Biography

Research Interests

Silicon carbide power semiconductor interfaces, e.g., Schottky and MOS interfaces.

Wide bandgap semiconductors

Semiconductor device fabrication and characterisation

Teaching Interests

ES3E0 - Power Electronics - Devices and Converters

ES2G1 - Power Electronics as a Degree Apprenticeship Module

ES3E7 - Power Systems and Electrical Machines

Publication

  • The full and up-to-date list of publications are available on Google Scholar.

Projects and Grants

Silicon carbide Facilities

The PEATER Group is one of the leading research groups in the world focused on SiC device development, with a suite of equipment and facilities to match. This includes:

  • The Science City Cleanroom, a 150 m2 ISO class 6 cleanroom including high temperature oxidation and annealing furnaces, photolithography, etching and wet processing, metal deposition, and atomic layer deposition.
  • The UK's only industrial SiC CVD reactor in an ISO class 4 cleanroom, used for the epitaxial growth of SiC.
  • Characterisation Facilities, including a Keysight B1505A power device analyser and a SemiProbe semi-automated wafer prober for device characterisation up to 10 kV, 500 A and 300°C.
  • An ISO class-8 packaging cleanroom.
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