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Ultrafast & Terahertz Photonics Group

Research areas


We use pump/probe spectroscopy to study how light and matter interact on femtosecond to nanosecond timescales. Using visible probes we can track electronic processes, while infrared radiation lets us study vibrational states of molecules and atomic-scale defects in semiconductors.


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Terahertz medical imaging

Performing in vivo studies of the THz properties of skin is a major initiative in the group, supported by the EPSRC Terabotics Programme GrantLink opens in a new window. We develop robust measurement protocols and test them on a statistically significant number of patients, cross-checking with other methods.


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Semiconductors and Energy materials

A major strand of our research is to improve our knowledge of the fundamental science underpinning new semiconductor materials, such as metal-halide perovskites, which are often attractive for photovoltaic applications.

Electronically-delayed optical pump/THz probe spectroscopy on a variety of semiconductors

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Terahertz components, methods and techniques

We develop new THz devices and integrate them into novel systems designs that can perform THz imaging and THz spectroscopy faster, and with increased capabilities (e.g. polarisation control; robot-controlled probes).


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Recent publication highlights [filter by topic: view all | highlights | THz | perovskites | nano | biomedical]

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Nanotechnology for catalysis and solar energy conversion

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Mon 09 Nov 2020, 17:46 | Tags: THz spectroscopy, nanomaterials, Milot, perovskites, 2020, review

Metal composition influences optoelectronic quality in mixed-metal lead-tin triiodide perovskite solar absorbers

M. T. Klug, R. L. Milot, J.B. Patel, T. Green, H. C. Sansom, M. D. Farrar, A. J. Ramadan, S. Martani, Z. Wang, B. Wenger, J. M. Ball, L. Langshaw, A. Petrozza, M. B. Johnston, L. M. Herz and H. J. Snaith
Energy & Environmental Science (May 2020)

Klug 2020

Fri 01 May 2020, 13:00 | Tags: THz spectroscopy, photoluminescence, Milot, perovskites, 2020

The Effects of Doping Density and Temperature on the Optoelectronic Properties of Formamidinium Tin Triiodide Thin Films

R. L. Milot, M. T. Klug, C. L. Davies, Z. Wang, H. Kraus, H. J. Snaith, M. B. Johnston, and L. M. Herz
Advanced Materials (Sept 2018) [ pdf ] [ ref ]

fasni3_toc_2.pngOptoelectronic properties are unraveled for formamidinium tin triiodide (FASnI3) thin films, whose background hole doping density is varied through SnF2 addition during film fabrication. Monomolecular charge‐carrier recombination exhibits both a dopant‐mediated part that grows linearly with hole doping density and remnant contributions that remain under tin‐enriched processing conditions. At hole densities near 1020 cm−3, a strong Burstein–Moss effect increases absorption onset energies by ≈300 meV beyond the bandgap energy of undoped FASnI3 (shown to be 1.2 eV at 5 K and 1.35 eV at room temperature). At very high doping densities (1020 cm−3), temperature‐dependent measurements indicate that the effective charge‐carrier mobility is suppressed through scattering with ionized dopants. Once the background hole concentration is nearer 1019 cm−3 and below, the charge‐carrier mobility increases with decreasing temperature according to ≈T−1.2, suggesting that it is limited mostly by intrinsic interactions with lattice vibrations. For the lowest doping concentration of 7.2 × 1018 cm−3, charge‐carrier mobilities reach a value of 67 cm2 V−1 s−1 at room temperature and 470 cm2 V−1 s−1 at 50 K. Intraexcitonic transitions observed in the THz‐frequency photoconductivity spectra at 5 K reveal an exciton binding energy of only 3.1 meV for FASnI3, in agreement with the low bandgap energy exhibited by this perovskite.

Thu 20 Sep 2018, 15:18 | Tags: THz spectroscopy, 2018, photoluminescence, Milot, perovskites

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