Monolayer molybdenum disulfide (MoS2) is a promising candidate for inclusion in optoelectronic technologies, owing to its two-dimensional (2D) nature and resultant novel photoluminescence (PL). Chemical vapour deposition (CVD) is an important method for the preparation of large-area films of monolayer MoS2. The PL character of as-prepared monolayer MoS2 must be well understood to facilitate detailed evaluation of any process-induced effects during device fabrication. We comparatively explore the PL emission from four different commercially available CVD-grown MoS2 monolayer films. We characterize the samples via Raman and PL spectroscopy, using both single-spot and mapping techniques, while atomic force microscopy (AFM) is applied to map the surface structure. Via multipeak fitting, we decompose the PL spectra into constituent exciton and trion contributions, enabling an assessment of the quality of the MoS2 monolayers. We find that the PL character varies significantly from sample to sample. We also reveal substantial inhomogeneity of the PL signal across each individual MoS2 film. We attribute the PL variation to non-uniform MoS2 film morphologies that result from the nucleation and coalescence processes during the CVD film development. Understanding the large variability in starting PL behaviour is vital to optimize the optoelectronic properties for MoS2-based devices.

Light-emitting diodes (LEDs) are ubiquitous in modern society, with applications spanning from lighting and displays to medical diagnostics and data communications. Metal-halide perovskites are promising materials for LEDs because of their excellent optoelectronic properties and solution processability. Although research has progressed substantially in optimizing their external quantum efficiency, the modulation characteristics of perovskite LEDs remain unclear. Here we report a holistic approach for realizing fast perovskite photonic sources on silicon based on tailoring alkylammonium cations in perovskite systems. We reveal the recombination behaviour of charged species at various carrier density regimes relevant for their modulation performance. By integrating a Fabry–Pérot microcavity on silicon, we demonstrate perovskite devices with efficient light outcoupling. We achieve device modulation bandwidths of up to 42.6 MHz and data rates above 50 Mbps, with further analysis suggesting that the bandwidth may exceed gigahertz levels. The principles developed here will support the development of perovskite light sources for next-generation data-communication architectures. The demonstration of solution-processed perovskite emitters on silicon substrates also opens up the possibility of integration with micro-electronics platforms.

Atomically thin nanowires (NWs) can be synthesized inside single-walled carbon nanotubes (SWCNTs) and feature unique crystal structures. Here we show that HgTe nanowires formed inside small-diameter (<1 nm) SWCNTs can advantageously alter the optical and electronic properties of the SWCNTs. Metallic purification of the filled SWCNTs was achieved by a gel column chromatography method, leading to an efficient extraction of the semiconducting and metallic portions with known chiralities. Electron microscopic imaging revealed that zigzag HgTe chains were the dominant NW geometry in both the semiconducting and metallic species. Equilibrium-state and ultrafast spectroscopy demonstrated that the coupled electron–phonon system was modified by the encapsulated HgTe NWs, in a way that varied with the chirality. For semiconducting SWCNTs with HgTe NWs, Auger relaxation processes were suppressed, leading to enhanced photoluminescence emission. In contrast, HgTe NWs enhanced the Auger relaxation rate of metallic SWCNTs and created faster phonon relaxation, providing experimental evidence that encapsulated atomic chains can suppress hot carrier effects and therefore boost electronic transport.

Bringing together the expertise from fifteen laboratories the current-voltage characteristics of a solar cell are modeled using contactless terahertz and microwave measurements. To this end, the impact of measurement conditions, alternate interpretations, and experimental inter-laboratory variations are discussed. For a neat (Cs,FA,MA)Pb(I,Br)3 thin film, the implied resistance-free JV-curve and the fill factor losses by its finite mobility are revealed.