The phase diagram of CeOs4Sb12 was mapped in fields up to 60 T and temperatures down to 0.5 K. The field-induced valence transition shows an unusual phase boundary deviating from textbook behaviour.

The department is pleased to confirm that the following staff have been awarded promotions as of 1 June 2020 (new position in brackets):

Animesh Datta (Reader)
Nick Hine (Reader)
James Lloyd-Hughes (Reader)
James McCormac (Senior Research Fellow)
Michael Pounds (Associate Professor)
Dimitri Veras (Associate Professor)

Congratulations to all.

To promote potential applications of terahertz (THz) technology, more advanced functional THz devices with high performance are needed, including modulators, polarizers, lenses, wave retarders, and antireflection coatings. This work summarizes recent progress in THz components built on functional materials including graphene, vanadium dioxide, and metamaterials. The key message is that, while the choice of materials used in such devices is important, the geometry in which they are employed also has a significant effect on the performance achieved. In particular, devices operating in total internal reflection geometry are reviewed, and it is explained how this geometry is able to be exploited to achieve a variety of THz devices with broadband operation.