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Ultrafast & Terahertz Photonics Group


Warwick Centre for Ultrafast Spectroscopy

We are part of WCUS, a joint activity between the Physics and Chemistry Departments at the University of Warwick.

Warwick Centre for Ultrafast Spectroscopy

Recent news from WCUS

   

Recent publications from the group

A Robust Protocol for In Vivo THz Skin Measurements

H. Lindley-Hatcher, A. I Hernandez-Serrano, Q. Sun, J. Wang, J. Cebrian, L. Blasco, E. Pickwell-MacPherson
J Infrared Milli Terahz Waves 40 980 (August 2019) [ pdf ] [ ref ]

Pressure sensor circuitThis work presents an experimental setup to control the way in which pressure interferes with the repeatability of in vivo THz skin measurements. By integrating a pressure sensor circuit into our THz system, it is possible to identify which measurements were taken within a previously specified pressure range. The live response of the pressure sensor helps to acquire data within the desired pressure leading to greater consistency of data between measurements. Additionally, a protocol is proposed to help achieve repeatable results and to remove the effects of the natural variation of the skin through the course of the day. This technique has been shown to be able to quantify the changes induced in the skin following the application of a moisturising skin product and shows the measured result to be significantly different from natural skin variation. This research therefore prepares the way for further studies on the effectiveness of different skin products using in vivo THz measurements.

Wed 28 Aug 2019, 09:00 | Tags: THz spectroscopy, MacPherson, 2019, biomedical

Giant negative terahertz photoconductivity in controllably doped carbon nanotube networks

M.G. Burdanova, A.P. Tsapenko, D.A. Satco, R.J. Kashtiban, C.D.W. Mosley, M. Monti, M. Staniforth, J. Sloan, Y. Gladush, A.G. Nasibulin and J. Lloyd-Hughes
ACS Photonics 6 1058 (Mar 2019) [ free e-print ] [ preprint pdf ] [ ref ]

Negative photoconductivity in carbon nanotubesA strong negative photoconductivity was identified in thin film networks of single-walled carbon nanotubes using optical pump, THz probe spectroscopy. The films were controllably doped, using either adsorption doping with different p-type dopant concentrations, or ambipolar doping using an ionic gate. While doping enhanced the THz conductivity and increased the momentum scattering rate, interband photoexcitation lowered the spectral weight and reduced the momentum scattering rate. This negative THz photoconductivity was observed for all doping levels, regardless of the chemical potential, and decayed within a few picoseconds. The strong many-body interactions inherent to these 1D conductors led to trion formation under photoexcitation, lowering the overall conductivity of the carbon nanotube network. The large amplitude of negative THz photoconductivity and the tunability of its recovery time with doping offer promise for spectrally wide-band ultrafast devices including THz detectors, polarizers and modulators.

Sun 17 Mar 2019, 07:40 | Tags: THz spectroscopy, nanomaterials, Lloyd-Hughes, 2019

The Effects of Doping Density and Temperature on the Optoelectronic Properties of Formamidinium Tin Triiodide Thin Films

R. L. Milot, M. T. Klug, C. L. Davies, Z. Wang, H. Kraus, H. J. Snaith, M. B. Johnston, and L. M. Herz
Advanced Materials (Sept 2018) [ pdf ] [ ref ]

fasni3_toc_2.pngOptoelectronic properties are unraveled for formamidinium tin triiodide (FASnI3) thin films, whose background hole doping density is varied through SnF2 addition during film fabrication. Monomolecular charge‐carrier recombination exhibits both a dopant‐mediated part that grows linearly with hole doping density and remnant contributions that remain under tin‐enriched processing conditions. At hole densities near 1020 cm−3, a strong Burstein–Moss effect increases absorption onset energies by ≈300 meV beyond the bandgap energy of undoped FASnI3 (shown to be 1.2 eV at 5 K and 1.35 eV at room temperature). At very high doping densities (1020 cm−3), temperature‐dependent measurements indicate that the effective charge‐carrier mobility is suppressed through scattering with ionized dopants. Once the background hole concentration is nearer 1019 cm−3 and below, the charge‐carrier mobility increases with decreasing temperature according to ≈T−1.2, suggesting that it is limited mostly by intrinsic interactions with lattice vibrations. For the lowest doping concentration of 7.2 × 1018 cm−3, charge‐carrier mobilities reach a value of 67 cm2 V−1 s−1 at room temperature and 470 cm2 V−1 s−1 at 50 K. Intraexcitonic transitions observed in the THz‐frequency photoconductivity spectra at 5 K reveal an exciton binding energy of only 3.1 meV for FASnI3, in agreement with the low bandgap energy exhibited by this perovskite.

Thu 20 Sep 2018, 15:18 | Tags: THz spectroscopy, 2018, photoluminescence, Milot, perovskites

Efficient Intraband Hot Carrier Relaxation in the Perovskite Semiconductor Cs1-xRbxSnI3 Mediated by Strong Electron-Phonon Coupling

M. Monti, S. Tao, M. Staniforth, A. Crocker, E. Griffin, A. Wijesekara, R.A. Hatton, and J. Lloyd-Hughes
J. Phys. Chem. C 122 20669 (Aug 2018) [ pdf ] [ ref ]

THz conductivity dynamics of GaAs and CsSni3The dynamic increase in THz photoconductivity resulting from energetic intraband relaxation was used to track the formation of highly mobile charges in thin films of the tin iodide perovskite Cs1-xRbxSnI3, with x=0 and x=0.1. Energy relaxation times were found to be around 500fs, comparable to those in the prototypical inorganic semiconductor GaAs. At low excess energies the efficient intraband energy relaxation in the lowest conduction and valence bands of Cs1-xRbxSnI3 can be understood within the context of the Fröhlich electron-phonon interaction, with a strong coupling strength. For higher excess energies the photoconductivity rise time lengthens in accordance with carrier injection into multiple bands, identified by quantitative first-principles bandstructure calculations and photoluminescence spectroscopy. The findings contribute to the development of design rules for photovoltaic devices capable of extracting hot carriers from perovskite semiconductors.

Tue 21 Aug 2018, 09:45 | Tags: THz spectroscopy, 2018, photoluminescence, perovskites, Lloyd-Hughes

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