The electronic properties of semiconductors need to be well understood for any useful devices to be produced. There is an extensive range of techniques available that focus on different aspects of the electronic structure of a material, and exploit different effects. Some of these techniques are listed below, and a description of each technique can be found by following their links.

• Auger Electron Spectroscopy (AES) 
• Angle Resolved Photoemission Spectroscopy (ARPES)
• Capacitance Voltage Measurements (CV)
• Current Voltage Measurements (IV)
• Deep Level Transient Spectroscopy (DLTS)
• Electrochemical Capacitance Voltage Measurements (ECV)
• Hall Effect Measurements
• High Resolution Electron Energy Loss Spectroscopy (HREELS)
• Inverse Photoemission Spectroscopy (IPES)
• Optical spectroscopies (FTIR, UV-Vis)
• Scanning Tunnel Microscopy (STM), and Scanning Tunnelling Spectroscopy (STS)
• Ultra-violet Photoelectron Spectroscopy (UPS)
• X-ray Photoelectron Spectroscopy (XPS)  
  
• STM-Scanning Tunneling Microscope