Electrical Power and Control Cluster
Electrical Power & Control
Powering Possibilities, Mastering Control.
The Electrical Power Research Group at Warwick is set up to conduct internationally leading research and drive for cutting edge technology development in tackling the great challenges in power generation, energy conversion, distribution, transmission and efficient use of energy.
Power Electronics Applications and Technology in Energy Research (PEATER)
Carries out work in electrical energy conversion, from the very small power (mW) levels to very high power levels (MW). This technology centres on the developments in semiconductor switching devices. The developments in MOSFET and IGBT technologies have paved the way for new applications such as hybrid vehicles, electric aircraft, electric ship propulsion, wind turbines as well as the revolution in mobile phone and computing devices, where energy management is critical to all these applications.
Power and Control Systems Research Laboratory
The Research Laboratory is led by Professor Jihong Wang and the research areas cover: energy efficiency, power system modelling, simulation, control and monitoring, nonlinear control system theory, Electrical drives and control, energy storage and grid integration. The Research Laboratory is active in development and demonstration of new technology in supporting energy revolution.
ICSE
The ICSE research group at Warwick, led by Professor Xiaowei Zhao, is leading research in advanced control systems and smart energy technologies.
Power Electronics Reliability Characterisation Laboratory
This research laboratory is led by Professor Layi Alatise and is oriented towards testing, characterisation and evaluation of the robustness and reliability of Power Semiconductor Devices.
Peter Gammon
Professor Peter Gammon is a leading researcher in Silicon Carbide (SiC) power electronic devices at the University of Warwick’s School of Engineering, where he has been a faculty member since 2012. His research focuses on developing and commercialising the next generation of SiC power devices for applications in electric vehicles, satellites, renewable energy, and the grid.
Professor Gammon is the University of Warwick’s lead within the REWIRE Innovation and Knowledge Centre(EP/Z531091/1), which aims to commercialise wide-bandgap semiconductor devices for power electronics in collaboration with over 30 industrial partners. A formerRoyal Academy of Engineering Research Fellow, he has led several major UKRI and EU-funded projects. Three major grants onradiation-hard SiC devices for space applications, including theSiCSat Project (EP/V000543/1), advanced SiC technology for use in satellites and space agency missions. TheSwitch Optimisation Theme (EP/R00448X/1)within theEPSRC Centre for Power Electronicsdeveloped ultra-high-voltage (10 kV+) SiC IGBT devices for grid applications.
t.Dr Arne Benjamin Renz
Dr Arne Benjamin Renz is an Assistant Professor and leading researcher in silicon carbide (SiC) power electronic interfaces at the University of Warwick's School of Engineering. Since his research career began in 2017, his research has focused on developing and commercialising novel ways of improving the power semiconductor interfaces that SiC forms with oxides (MOS) and metals (Schottky) for applications in EVs, renewable energy, the grid, satellites, and radiation-sensitive environments.
Dr Renz is currently Principal Investigator (PI) and co-Investigator (CI) on several highly competitive research grants, including Innovate UK/Switzerland Bilateral on"Innovations in SiC power MOSFET gate technology through the use of ALD oxides"(£1m total), and a CI on theREWIRE Innovation and Knowledge Centre (EP/Z531091/1), which aims to commercialise wide-bandgap semiconductor devices for power electronics in collaboration with over 30 industrial partners. He was lead researcher on major grants on radiation-hard SiC devices for space applications, including theSiCSAT Project (EP/V000543/1), and the development of ultra-high voltage (10 kV+) SiC IGBT devices for grid applications within the EPSPRC Centre for Power Electronics' Switch Optimisation Theme(EP/R00448X/1)
Key Publications
Antoniou, M., Mateus, C., Hollingsworth, B., Titman, A., 2024. A Systematic Review of Methodologies Used in Models of the Treatment of Diabetes Mellitus. PharmacoEconomics 42, 19–40.https://doi.org/10.1007/s40273-023-01312-4Link opens in a new window
Antoniou, M., Udrea, F., Tee, E.K.C., Holke, A., 2022. High-Voltage 3-D Partial SOI Technology Platform for Power Integrated Circuits. IEEE Trans. Electron Devices 69, 3296–3301.https://doi.org/10.1109/TED.2022.3166465Link opens in a new window
Baker, G.W.C., Gammon, P.M., Renz, A.B., Vavasour, O., Chan, C.W., Qi, Y., Dai, T., Li, F., Zhang, L., Kotagama, V., Shah, V.A., Mawby, P.A., Antoniou, M., 2022. Optimization of 1700-V 4H-SiC Semi-Superjunction Schottky Rectifiers With Implanted P-Pillars for Practical Realization. IEEE Trans. Electron Devices 69, 1924–1930.https://doi.org/10.1109/TED.2022.3152460Link opens in a new window
Dong, H., Zhao, X., Luo, B., 2022. Optimal Tracking Control for Uncertain Nonlinear Systems With Prescribed Performance via Critic-Only ADP. IEEE Trans. Syst. Man Cybern, Syst. 52, 561–573.https://doi.org/10.1109/TSMC.2020.3003797Link opens in a new window
Gonzalez, J.O., Alatise, O., 2021. Bias Temperature Instability and Junction Temperature Measurement Using Electrical Parameters in SiC Power MOSFETs. IEEE Trans. on Ind. Applicat. 57, 1664–1676.https://doi.org/10.1109/TIA.2020.3045120Link opens in a new window
He, W., King, M., Luo, X., Dooner, M., Li, D., Wang, J., 2021. Technologies and economics of electric energy storages in power systems: Review and perspective. Advances in Applied Energy 4, 100060.https://doi.org/10.1016/j.adapen.2021.100060Link opens in a new window
Hill, R.M., Devasagayam, J., Holmes, N., Boto, E., Shah, V., Osborne, J., Safar, K., Worcester, F., Mariani, C., Dawson, E., Woolger, D., Bowtell, R., Taylor, M.J., Brookes, M.J., 2022. Using OPM-MEG in contrasting magnetic environments. NeuroImage 253, 119084.https://doi.org/10.1016/j.neuroimage.2022.119084Link opens in a new window
Holmes, N., Rea, M., Hill, R.M., Leggett, J., Edwards, L.J., Hobson, P.J., Boto, E., Tierney, T.M., Rier, L., Rivero, G.R., Shah, V., Osborne, J., Fromhold, T.M., Glover, P., Brookes, M.J., Bowtell, R., 2023. Enabling ambulatory movement in wearable magnetoencephalography with matrix coil active magnetic shielding. NeuroImage 274, 120157.https://doi.org/10.1016/j.neuroimage.2023.120157Link opens in a new window
Hu, B., Hu, Z., Ran, L., Ng, C., Jia, C., McKeever, P., Tavner, P.J., Zhang, C., Jiang, H., Mawby, P.A., 2021a. Heat-Flux-Based Condition Monitoring of Multichip Power Modules Using a Two-Stage Neural Network. IEEE Trans. Power Electron. 36, 7489–7500.https://doi.org/10.1109/TPEL.2020.3045604Link opens in a new window
Hu, B.,Konaklieva, S., Kourra, N., Williams, M.A., Ran, L., Lai, W., 2021b. Long-Term Reliability Evaluation of Power Modules With Low Amplitude Thermomechanical Stresses and Initial Defects. IEEE J. Emerg. Sel. Topics Power Electron. 9, 602–615.https://doi.org/10.1109/JESTPE.2019.2958737Link opens in a new window
Jiang, H., Qi, X., Qiu, G., Zhong, X., Tang, L., Mao, H., Wu, Z., Chen, H., Ran, L., 2022. A Physical Explanation of Threshold Voltage Drift of SiC MOSFET Induced by Gate Switching. IEEE Trans. Power Electron. 37, 8830–8834.https://doi.org/10.1109/TPEL.2022.3161678Link opens in a new window
King, M., Jain, A., Bhakar, R., Mathur, J., Wang, J., 2021. Overview of current compressed air energy storage projects and analysis of the potential underground storage capacity in India and the UK. Renewable and Sustainable Energy Reviews 139, 110705.https://doi.org/10.1016/j.rser.2021.110705Link opens in a new window
Lioliou, G., Renz, A.B., Shah, V.A., Gammon, P.M., Barnett, A.M., 2022. Mo/4H-SiC Schottky diodes for room temperature X-ray and γ -ray spectroscopy. Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 1027, 166330.https://doi.org/10.1016/j.nima.2022.166330Link opens in a new window
Liu, J., Wang, J., Cardinal, J., 2022. Evolution and reform of UK electricity market. Renewable and Sustainable Energy Reviews 161, 112317.https://doi.org/10.1016/j.rser.2022.112317Link opens in a new window
Orti Gonzalez, J., Alatise, O., 2021. Impact of BTI-Induced Threshold Voltage Shifts in Shoot-Through Currents From Crosstalk in SiC MOSFETs. IEEE Trans. Power Electron. 36, 3279–3291.https://doi.org/10.1109/TPEL.2020.3012298Link opens in a new window
Panda, K., Bana, P., Kiselychnyk, O., Wang, J., Panda, G., 2021. A Single-Source Switched-Capacitor-Based Step-Up Multilevel Inverter With Reduced Components. IEEE Trans. on Ind. Applicat. 57, 3801–3811.https://doi.org/10.1109/TIA.2021.3068076Link opens in a new window
Rea, M., Holmes, N., Hill, R.M., Boto, E., Leggett, J., Edwards, L.J., Woolger, D., Dawson, E., Shah, V., Osborne, J., Bowtell, R., Brookes, M.J., 2021. Precision magnetic field modelling and control for wearable magnetoencephalography. NeuroImage 241, 118401.https://doi.org/10.1016/j.neuroimage.2021.118401Link opens in a new window
Ren, H., Shao, W., Ran, L., Hao, G., Zhou, L., Mawby, P., Jiang, H., 2021. A Phase Change Material Integrated Press Pack Power Module With Enhanced Overcurrent Capability for Grid Support—A Study on FRD. IEEE Trans. on Ind. Applicat. 57, 3956–3968.https://doi.org/10.1109/TIA.2021.3069721Link opens in a new window
Renz, A.B., Vavasour, O.J., Gammon, P.M., Li, F., Dai, T., Antoniou, M., Baker, G.W.C., Bashar, E., Grant, N.E., Murphy, J.D., Mawby, P.A., Shah, V.A., 2021. The improvement of atomic layer deposited SiO2/4H-SiC interfaces via a high temperature forming gas anneal. Materials Science in Semiconductor Processing 122, 105527.https://doi.org/10.1016/j.mssp.2020.105527Link opens in a new window
Turkeri, C., Kiselychnyk, O., 2023. Dynamical Modelling of a Centrifugal Fan Driven by an Induction Motor and Experimental Validation. Energies 16, 6658.https://doi.org/10.3390/en16186658Link opens in a new window
Wu, R., Mendy, S., Agbo, N., Gonzalez, J., Jahdi, S., Alatise, O., 2021. Performance of Parallel Connected SiC MOSFETs under Short Circuits Conditions. Energies 14, 6834.https://doi.org/10.3390/en14206834Link opens in a new window
Xie, J., Dong, H., Zhao, X., 2023. Data-driven torque and pitch control of wind turbines via reinforcement learning. Renewable Energy 215, 118893.https://doi.org/10.1016/j.renene.2023.06.014Link opens in a new window
Yang, H., Hu, Q., Dong, H., Zhao, X., 2022. ADP-Based Spacecraft Attitude Control Under Actuator Misalignment and Pointing Constraints. IEEE Trans. Ind. Electron. 69, 9342–9352.https://doi.org/10.1109/TIE.2021.3116571Link opens in a new window
Yang, J., Jahdi, S., Stark, B., Alatise, O., Ortiz-Gonzalez, J., Wu, R., Mellor, P., 2022. Crosstalk Induced Shoot-Through in BTI-Stressed Symmetrical & Asymmetrical Double-Trench SiC Power MOSFETs. IEEE Open J. Ind. Electron. Soc. 3, 188–202.https://doi.org/10.1109/OJIES.2022.3160095Link opens in a new window
Yang, M.-M., Zhu, T.-Y., Renz, A.B., Sun, H.-M., Liu, S., Gammon, P.M., Alexe, M., 2024. Auxetic piezoelectric effect in heterostructures. Nat. Mater. 23, 95–100.https://doi.org/10.1038/s41563-023-01736-5Link opens in a new window
Yin, X., Zhao, X., 2021. Deep Neural Learning Based Distributed Predictive Control for Offshore Wind Farm Using High-Fidelity LES Data. IEEE Trans. Ind. Electron. 68, 3251–3261.https://doi.org/10.1109/TIE.2020.2979560Link opens in a new window
Yu, R., Jahdi, S., Mellor, P., Liu, L., Yang, J., Shen, C., Alatise, O., Ortiz-Gonzalez, J., 2023. Degradation Analysis of Planar, Symmetrical and Asymmetrical Trench SiC MOSFETs Under Repetitive Short Circuit Impulses. IEEE Trans. Power Electron. 38, 10933–10946.https://doi.org/10.1109/TPEL.2023.3290387Link opens in a new window
Zhong, X., Jiang, H., Qiu, G., Tang, L., Mao, H., Chao, X., Jiang, X., Hu, J., Qi, X., Ran, L., 2021. Bias Temperature Instability of Silicon Carbide Power MOSFET under AC Gate Stresses. IEEE Trans. Power Electron. 1–1.https://doi.org/10.1109/TPEL.2021.3105272Link opens in a new window
Research Project Spotlights:
Coming soon...
Coming soon...
Coming soon...
| Title | Funder | Award start | Award end |
|---|---|---|---|
| MSCA DN 2024- WindConnect | European Commission | 01 Oct 2025 | 30 Sept 2029 |
| Semiconductor technology for ICT innovation and knowledge centre | EPSRC | 01 Apr 2024 | 31 Mar 2029 |
| Condition and Health Monitoring in Power Electronics - Wide Band Gap Power Electronics for the energy sector | European Commission | 01 Oct 2024 | 30 Sept 2028 |
| Microsystems Network Grant | EPSRC | 01 Mar 2025 | 29 Feb 2028 |
| Modelling and Control of Flexible Structures Interacting with Fluids (ModConFlex) - UKRI Guarantee Funding, original MSCA DTN | UK Research and Innovation | 01 Feb 2023 | 31 Jan 2028 |
| Supergen Offshore Renewable Energy Hub | EPSRC | 01 Jul 2023 | 30 Jun 2027 |
| UK-Swtizerland Bilateral: Collaborative R&D: Innovations in Power MOSFET Gate technology through the use of ALD oxides | Innovate UK | 01 Jul 2024 | 31 Mar 2027 |
| Supergen Network + in Artificial Intelligence for Renewable Energy (SuperAIRE) | EPSRC | 01 Jul 2024 | 30 Jun 2026 |
| Royal Society International Exchanges Cost Share- Japan: Research on novel SiC power device technologies for ultra-high-voltage applications | Royal Society | 31 Mar 2024 | 30 Mar 2026 |
| A New Generation of Power Semiconductor Devices: the SiC SJ IGBT | Royal Society | 02 Jan 2019 | 31 Jan 2026 |
| TESIC-SUPERJ - TRENCH EPITAXY FOR SILICON CARBIDE SUPERJUNCTIONS | EPSRC | 01 Oct 2021 | 31 Jul 2025 |
To be updated for the academic year 25/26
To be updated for the academic year 25/26
We have opportunities to study with us, from undergraduate courses to postgraduate research courses.
Undergraduate Courses
Develop specialist knowledge of electrical and electronic engineering devices, processes and systems.
Available Course Options
- BEng Electrical and Electronic Engineering (H605) - 3 years
- MEng Electrical and Electronic Engineering (H606)- 4 years
If you aspire to achieve Chartered Engineer (CEng) status, a degree from Warwick is a great starting point. The majority of our degrees are accredited by licensed professional engineering institutions, such as the IET, IMechE and JBM and provide the academic component (in part or fully) needed for Chartered Engineer status.
Postgraduate Teaching Courses
Duration:1 year full-time
Entry requirements:A minimum 2:1 undergraduate UK Honours degree or equivalent international qualification, in electronic, electrical or telecommunications engineering, or in an engineering science programme (with electronic, electrical, telecommunications or systems pathway).
Electrical Power Engineering (MSc)
Duration:1 year full-time
Entry requirements:A minimum 2:i undergraduate UK Honours degree or equivalent international qualification, in an engineering, physical sciences or mathematical subject.
Postgraduate Research Courses
Warwick’s School of Engineering has a vibrant postgraduate research community, with over 150 students pursuing postgraduate research degrees and more than 40 postdoctoral researchers.
Our position as a general engineering department strengthens our capabilities, enabling multi-disciplinary collaborative research. Our researchers engage with colleagues from across Warwick and beyond to develop innovative solutions to real-world challenges. Our partners include universities, SMEs, large businesses, NHS Trusts and charitable organisations.