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Dept News

Experimental Demonstration of Room-Temperature Spin Transport in n-Type Germanium Epilayers

Room-temperature spin transport has now been shown in both pivotal semiconductor materials, Ge and Si, providing new opportunities for the future of semiconductor spintronics.

Tue 12 March 2019, 15:17 | Tags: Research

Spinless composite fermions in an ultrahigh-quality strained Ge quantum well

Discovery of Fractional Quantum Hall Effect in a strained Germanium semiconductor indicates superior quality of epitaxial material and offers the simplest system to research quantum physics.

Tue 12 March 2019, 15:08 | Tags: Research

Self-organised fractional quantisation in a hole quantum wire

The discovery suggests a new area of experimentation in 1D systems, particularly direct measurement of the charge, with implications for possible schemes of topological quantum information processing.

Tue 12 March 2019, 15:04 | Tags: Research

Spin-coherent dynamics and carrier lifetime in strained Ge1−xSnx semiconductors on silicon

The first observation of spin dynamics in the Germanium Tin semiconductor can potentially offer a very rich spin physics, whose fundamental understanding is however still absent.

Tue 12 March 2019, 14:57 | Tags: Research

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